View BSB027P03LX3G_4739232.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

industrial & multimarket data sheet 1.9, 2011-03-02 preliminary optimos? p3 bsb027p03lx3 g p-channel power mosfet
optimos? power-mosfet bsb027p03lx3 g preliminary data sheet 1 1.9, 2011-03-02 1 description optimos? p3 -30v products are class leading power p-channel mosfets for highest power density and energy efficient solutions. lowest on state resistance in small footprint packages make optimos? p3 -30v the best choice for the demanding requirements of load swit ch, high-side switch and battery management applications. optimos? p3 products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing sp ace, efficiency and cost. features ? p-channel mosfet ? very low on-resistance r ds(on) ? qualified for consumer level application ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 ? double sided cooling ? compatible with directfet? pa ckage mx footprint and outline 1) ? 100% avalanche tested ? low parasitic inductance ? low profile (<0.7 mm) applications ? load switch ? high-side switch ? battery management 1) directfet ? is a trademark of inte rnational rectifier corporat ion. bsb027p03lx3 gg uses directfet ? technology licensed from international rectifier corporation table 1 key performance parameters parameter value unit related links v ds -30 v ifx optimos webpage r ds(on),max 2.7 m ifx optimos product brief i d 142 a ifx optimos spice models q oss 108 nc ifx design tools q g . typ 75 type package marking bsb027p03lx3 g mg-wdson-2 5003
optimos? power-mosfet bsb027p03lx3 g preliminary data sheet 2 1.9, 2011-03-02 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current i d --142 a v gs =10 v, t c =25 c 90 v gs =10 v, t c =100 c 27 v gs =10 v, t a =25 c, r thja =45 k/w) 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6cm2 (o ne layer, 70 m thick) cop per area for drain connection. pcb is vertical in still air pulsed drain current 2) 2) see figure 3 for more detailed information i d,pulse --400 t c =25 c avalanche current, single pulse 3) 3) see figure 13 for mo re detailed information i as 40 t c =25 c avalanche energy, single pulse e as --290 mj i d =40 a, r gs =25 gate source voltage v gs -20 - 20 v power dissipation p tot --78 w t c =25 c 2.8 t a =25 c, r thja =45 1) k/w operating and storage temperature t j , t stg -40 - 150 c iec climatic category; din iec 68-1 55/150/56 table 3 thermal characteristics parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - 1.0 - k/w bottom -- 1.6 top device on pcb r thja -- 45 6 cm 2 cooling area 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain conneciton. pcb is vertical in still air.
optimos? power-mosfet bsb027p03lx3 g electrical characteristics preliminary data sheet 3 1.9, 2011-03-02 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 30 - - v v gs =0 v, i d =1 ma gate threshold voltage v gs(th) -1 -1.5 -2 v ds = v gs , i d =250 a zero gate voltage drain current i dss -0.110a v ds =30v, v gs =0 v, t j =25 c - 10 100 v ds =30 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) -3.44.2m v gs =4.5 v, i d =25a 2.3 2.7 v gs =10 v, i d =30a gate resistance r g -2.5- transconductance g fs 55 110 s | v ds |>2| i d|rds(on)max , i d =30 a table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 13000 17000 pf v gs =0 v, v ds =15 v, f =1 mhz output capacitance c oss - 5800 7700 reverse transfer capacitance c rss - 380 570 turn-on delay time t d(on) -2741ns v dd =15v, v gs =10 v, i d =30 a, r g =1.6 rise time t r -1117 turn-off delay time t d(off) -80120 fall time t f -1421
optimos? power-mosfet bsb027p03lx3 g electrical characteristics preliminary data sheet 4 1.9, 2011-03-02 table 6 gate charge characteristics 1) 1) see figure 16 for gate charge parameter definition parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -3344nc v dd =15 v, i d =30 a, v gs =0 to 4.5 v gate charge at threshold q g(th) 19 25 gate to drain charge q gd -1728 switching charge q sw -3147 gate charge total q g 75 100 gate plateau voltage v plateau -2.8- v gate charge total q g 158 210 nc v dd =15 v, i d =30a, v gs =0 to10v gate charge total, sync. fet q g(sync) 65 86 v ds =0.1v, v gs =0 to 4.5v output charge q oss 108 143 v dd =15 v, v gs =0 v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode continuous forward current i s 78 a t c =25 c diode pulse current i s,pulse 310 diode forward voltage v sd -0.81.0v v gs =0 v, i f =30 a, t j =25 c reverse reco very charge q rr - 119 149 nc v r =15v, i f = i s , d i f /d t =400 a/s
optimos? power-mosfet bsb027p03lx3 g electrical characteristics diagrams preliminary data sheet 5 1.9, 2011-03-02 5 electrical characteristics diagrams table 8 1 power dissipation 2 drain current p tot = f( t c ) i d =f(t c ); parameter :v gs table 9 3 safe operating area t c =25 c 4 max. transient thermal impedance i d =f( v ds ); t j =25 c; d=0; parameter: t p z (thjc) =f( t p ); parameter: d= t p / t
optimos? power-mosfet bsb027p03lx3 g electrical characteristics diagrams preliminary data sheet 6 1.9, 2011-03-02 table 10 5 typ. output characteristics t c =25 c 6 typ. drain-source on-state resistance i d =f( v ds ); t j =25 c; parameter: v gs r ds(on) =f( i d ); t j =25 c; parameter: v gs table 11 7 typ. transfer characteristics 8 typ. forward transconductance i d =f(vgs); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c
optimos? power-mosfet bsb027p03lx3 g electrical characteristics diagrams preliminary data sheet 7 1.9, 2011-03-02 table 12 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250a table 13 11 typ. capacitances 12 forward characteristics of reverse diode c=f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ); parameter: t j
optimos? power-mosfet bsb027p03lx3 g electrical characteristics diagrams preliminary data sheet 8 1.9, 2011-03-02 table 14 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ; parameter: t j(start) v gs =f( q gate ); i d =30 a pulsed; parameter: v dd table 15 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( v ds ); i d =1 ma
optimos? power-mosfet bsb027p03lx3 g package outlines preliminary data sheet 9 1.9, 2011-03-02 6 package outlines figure 1 outlines mg-wdson-2, dimensions in mm/inches
optimos? power-mosfet bsb027p03lx3 g package outlines preliminary data sheet 10 1.9, 2011-03-02 7 package outlines figure 2 outlines mg-wdson-2, dimensions in mm/inches
optimos? power-mosfet bsb027p03lx3 g package outlines preliminary data sheet 11 1.9, 2011-03-02 8 package outlines
optimos? power-mosfet bsb027p03lx3 g revision history preliminary data sheet 12 1.9, 2011-03-02 9 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-03-02 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered. revision history: 2011-03-02, 1.9 previous revision: revision subjects (major ch anges since last revision) 0.1 release of target data sheet 1.9 release of preliminary data sheet

▲Up To Search▲

Price & Availability of BSB027P03LX3G

	To Download BSB027P03LX3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .